发明名称 High-voltage CMOS-compatible capacitors
摘要 A high-voltage stacked capacitor includes a first capacitor and a second capacitor. Each capacitor includes a first plate having a first semiconductive body and a second plate having a floating electrode. The first and second semiconductive bodies are electrically isolated from each other. The floating electrode includes an intercapacitor node configured to self-adjust to a value less than a working voltage impressed on the stacked capacitor.
申请公布号 US7042701(B2) 申请公布日期 2006.05.09
申请号 US20040931582 申请日期 2004.09.01
申请人 发明人
分类号 H01G4/30;H01L27/08 主分类号 H01G4/30
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