发明名称 |
Damascene tri-gate FinFET |
摘要 |
A method of forming a fin field effect transistor includes forming a fin and forming a source region adjacent a first end of the fin and a drain region adjacent a second end of the fin. The method further includes forming a dummy gate over the fin and forming a dielectric layer around the dummy gate. The method also includes removing the dummy gate to form a trench in the dielectric layer and forming a metal gate in the trench.
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申请公布号 |
US7041542(B2) |
申请公布日期 |
2006.05.09 |
申请号 |
US20040754559 |
申请日期 |
2004.01.12 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
AHMED SHIBLY S.;WANG HAIHONG;YU BIN |
分类号 |
H01L21/338;H01L21/336;H01L29/786 |
主分类号 |
H01L21/338 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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