发明名称 |
Vertical transistor and method of making |
摘要 |
The invention relates to a vertical transistor and an oxidation process that achieves a substantially curvilinear recess bottom. The recess serves as the gate receptacle that may facilitate a more uniform gate oxide layer. One embodiment relates to a storage cell that is disposed in the recess along with an electrode. Another embodiment relates to a system that includes the vertical transistor or the vertical storage cell.
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申请公布号 |
US7041556(B2) |
申请公布日期 |
2006.05.09 |
申请号 |
US20040929800 |
申请日期 |
2004.08.30 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
GONZALEZ FERNANDO |
分类号 |
H01L21/8247;H01L21/28;H01L21/336;H01L21/762;H01L21/8234;H01L29/423;H01L29/51 |
主分类号 |
H01L21/8247 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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