| 发明名称 |
High density memory array |
| 摘要 |
The memory array contains two layers representing word lines of different rows. Each row contains multiple bit cells sharing the same word line. The two layers are stacked one on top of another to form a high density memory array.
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| 申请公布号 |
US7042030(B2) |
申请公布日期 |
2006.05.09 |
| 申请号 |
US20030717551 |
申请日期 |
2003.11.21 |
| 申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
BALASURAMANIAN SURESH;SPRIGGS STEPHEN WAYNE;JAMISON GEORGE;MISHRA MOHAN |
| 分类号 |
H01L27/10;G11C17/12;H01L21/8246;H01L21/8247;H01L27/02;H01L27/105;H01L27/108;H01L27/112;H01L27/115;H01L29/40 |
主分类号 |
H01L27/10 |
| 代理机构 |
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