发明名称 Magnetic memory
摘要 One embodiment of a magnetic memory includes a memory cell configured to provide a first state, and a sensing circuit. The sensing circuit is configured to charge a capacitor through the memory cell in the first state and discharge the capacitor through the memory cell in the first state to determine a state of the memory cell.
申请公布号 US7042783(B2) 申请公布日期 2006.05.09
申请号 US20030464216 申请日期 2003.06.18
申请人 HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. 发明人 HILTON RICHARD LEE
分类号 G11C7/02;G11C7/00;G11C11/00;G11C11/15;G11C11/16;G11C11/24 主分类号 G11C7/02
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