发明名称 Multi-port memory device with global data bus connection circuit
摘要 There is provided a multi-port memory device, which is capable of minimizing a layout area of a global data bus connection circuit while maintaining a line arrangement of global data buses. The multi-port memory device includes a plurality of unit global data bus connection circuits for selectively connecting first and second global data buses, each of which includes a plurality of lines. The plurality of unit global data bus connection circuits are arranged in MxN matrix (M and N are integers greater than or equal to two). The respective unit global data bus connection circuits are overlapped with line axis of the corresponding first and second global data buses and adjacent line axis. Loads to be driven by the control signal of the global data bus connection circuit can be reduced and skew of the pipe register control signal can be minimized.
申请公布号 US7042791(B2) 申请公布日期 2006.05.09
申请号 US20040876403 申请日期 2004.06.25
申请人 HYNIX SEMICONDUCTOR INC. 发明人 PARK BYUNG-IL
分类号 G11C8/00;G11C11/401;G11C7/10;G11C11/4093;G11C11/4097 主分类号 G11C8/00
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