发明名称 Group III nitride compound semiconductor device
摘要 An object of the present invention is to provide a large-size light-emitting device from which uniform light emission can be obtained. That is, in the present invention, in a device having an outermost diameter of not smaller than 700 mum, a distance from an n electrode to a farthest point of a p electrode is selected to be not larger than 500 mum.
申请公布号 US7042089(B2) 申请公布日期 2006.05.09
申请号 US20040869629 申请日期 2004.06.17
申请人 TOYODA GOSEI CO., LTD. 发明人 UEMURA TOSHIYA;HIRANO ATSUO;OTA KOICHI;NAGASAKA NAOHISA
分类号 H01L23/48;H01L33/32;H01L33/38 主分类号 H01L23/48
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