| 摘要 |
Disclosed is a method for manufacturing a flash memory device. In a process of forming a flash memory cell and a select transistor through a process of forming a polysilicon layer for a floating gate, a process of forming a dielectric layer and a process of forming a polysilicon layer for a control gate, the dielectric layer is formed and the dielectric layer in a region where a select transistor will be formed is then removed, thereby forming a select gate line in which the polysilicon layer for the floating gate and the polysilicon layer for the control gate are electrically connected. Furthermore, in a process of forming a flash memory cell and a select transistor through a process of forming a polysilicon layer for a floating gate, a process of forming a dielectric layer and a process of forming a polysilicon layer for a control gate, forming an interlayer insulating layer on the entire structure and then forming a contact, the dielectric layer on the polysilicon layer for the floating gate in a region where a select transistor will be formed and the polysilicon layer for the control gate are all removed whereby the polysilicon layer for the floating gate and a contact plug are directly electrically connected.
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