Memory device having parallel test circuit,申请号KR20040015259-传众专利搜索

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发明名称	Memory device having parallel test circuit
摘要
申请公布号	KR100576453(B1)	申请公布日期	2006.05.08
申请号	KR20040015259	申请日期	2004.03.06
申请人		发明人
分类号	G11C29/00;G11C7/00	主分类号	G11C29/00
代理机构		代理人
主权项
地址

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