and method for manufacturing fin Field Effect Transistor,申请号KR20040011782-传众专利搜索

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发明名称	and method for manufacturing fin Field Effect Transistor
摘要
申请公布号	KR100577565(B1)	申请公布日期	2006.05.08
申请号	KR20040011782	申请日期	2004.02.23
申请人		发明人
分类号	H01L29/78;H01L21/336;H01L21/8242;H01L27/108;H01L29/786	主分类号	H01L29/78
代理机构		代理人
主权项
地址

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