发明名称 |
Cleaning solution and method for cleaning semiconductor device by using the same |
摘要 |
The present invention provides a cleaning solution and a method for cleaning a semiconductor device by the same capable of preventing damages on a tungsten layer from the cleaning solution and removing particles. The cleaning solution includes a deionized water-based ammonia solution; a surfactant added to the ammonia solution; and a chelating agent added to the ammonia solution. The method includes the steps of: depositing a photoresist layer on an upper portion of a substrate provided with a conductive layer including at least a tungsten layer; forming a photoresist pattern by patterning the photoresist layer; forming a conductive pattern by etching the conductive layer with use of the photoresist pattern as an etch mask; removing the photoresist pattern; and performing a cleaning process to the substrate provided with the conductive pattern by using a cleaning solution of a deionized water-based ammonia solution added with a surfactant and a chelating agent.
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申请公布号 |
US2006091110(A1) |
申请公布日期 |
2006.05.04 |
申请号 |
US20040027831 |
申请日期 |
2004.12.30 |
申请人 |
OH KEE-JOON |
发明人 |
OH KEE-JOON |
分类号 |
B44C1/22;C23F1/00;C23G1/00 |
主分类号 |
B44C1/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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