发明名称 METHODS AND COMPOSITIONS FOR CHEMICAL MECHANICAL POLISHING SUBSTRATES
摘要 Methods and compositions are provided for planarizing a substrate surface with reduced or minimal defects in surface topography. In one aspect, a method is provided for processing a substrate comprising a dielectric material and polysilicon material disposed thereon, polishing the polysilicon material with a high topography selective polishing composition, and polishing the polysilicon material with a material selective composition.
申请公布号 WO2006047088(A1) 申请公布日期 2006.05.04
申请号 WO2005US36564 申请日期 2005.10.12
申请人 APPLIED MATERIALS, INC.;SIN, GARRETT H.;SU, WINSTON Y.;HUEY, SIDNEY P. 发明人 SIN, GARRETT H.;SU, WINSTON Y.;HUEY, SIDNEY P.
分类号 C09G1/02;H01L21/304 主分类号 C09G1/02
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