| 摘要 |
A method for forming a field oxide is disclosed. In one embodiment, the method comprises providing a semiconductor structure having a substrate, a pad oxide, and a patterned barrier layer, performing a dry oxidation process to form a first field oxide on the substrate in a region not covered with the barrier layer by introducing pure dry oxygen, and performing a wet oxidation process to form a second field oxide adjacent the first field oxide by introducing hydrogen and oxygen. The method of the present invention can improve the quality and electrical property of the semiconductor device, increase the yield, and reduce the cost.
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