NONVOLATILE SEMICONDUCTOR STORAGE DEVICE AND PHASE CHANGE MEMORY

摘要

A phase change memory wherein phase change memory elements are highly integrated to ensure a sufficient write current and provide advantages in planar layout and operation control. A nonvolatile semiconductor storage device, in which a plurality of word lines (3) and a plurality of bit lines (4) are arranged in a matrix, comprises a selection transistor (1) provided at each of the intersections of the word lines (3) and bit lines (4); and memory element groups each comprising a predetermined number of memory elements (2) that have their respective one ends commonly connected to the selection transistor (1) and have their respective other ends connected to respective different ones of element selection lines (5) and that allow the writing and reading of information to and from them. A predetermined current is supplied via a selection transistor (1), which is to be controlled, through an element selection line (5) connected to a memory element (2) selected from a memory element group, thereby controlling the writing or reading operation of the selected memory element (2). On a semiconductor substrate, the element selection lines (5) are arranged in parallel with the bit lines (4).