发明名称 PRODUCTION METHOD OF SEMICONDUCTOR WAFER, AND SEMICONDUCTOR WAFER
摘要 <p>A production method of a semiconductor wafer comprising at least a double side polishing process and a chamfered part polishing process, characterized in that the chamfered part of a wafer is polished in a first chamfered part polishing process by touching the chamfered surface on each major surface side at least to a polishing cloth before double side polishing is carried out, and the end face at the chamfered part of the wafer is touched at least to the polishing cloth in second chamfered part polishing process before the chamfered part is polished while the opposite major surfaces of the wafer are prevented from touching the polishing cloth. Flaws on the chamfered part made in the double side polishing process when a semiconductor wafer is produced, are eliminated, and overpolishing is suppressed at the outer circumferential part of the major surface when the chamfered part is polished. Consequently, a production method of a semiconductor wafer having high planarity even in the vicinity of the chamfered part is provided, and a semiconductor wafer is also provided.</p>
申请公布号 WO2006046403(A1) 申请公布日期 2006.05.04
申请号 WO2005JP18745 申请日期 2005.10.12
申请人 SHIN-ETSU HANDOTAI CO., LTD.;KATO, TADAHIRO;SEKIZAWA, MASAYOSHI;OKADA, MAMORU;KIJIMA, HISASHI 发明人 KATO, TADAHIRO;SEKIZAWA, MASAYOSHI;OKADA, MAMORU;KIJIMA, HISASHI
分类号 H01L21/304;B24B9/00 主分类号 H01L21/304
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