| 摘要 |
Disclosed is a method for fabricating a gate electrode in a semiconductor device. The method includes the steps of: forming a plurality of trenches on a substrate in a cell region; sequentially forming a gate oxide layer, a polysilicon layer, a metal silicide layer and an insulation layer for a hard mask on the substrate; forming a mask pattern for forming the gate electrode on the insulation layer; forming a hard mask pattern by etching the insulation layer by using the mask pattern as an etch mask; removing the mask pattern; etching the metal silicide layer by using the hard mask pattern until the polysilicon layer is exposed in the peripheral region; etching the polysilicon layer by using a gas including chlorine (Cl<SUB>2</SUB>), nitrogen (N<SUB>2</SUB>) and helium (He) until the gate oxide layer is exposed in the peripheral region; and etching the polysilicon layer remained in the cell region. |
