| 摘要 |
A current-perpendicular-to-the-plane spin-valve (CPP-SV) magnetoresistive sensor has an improved antiparallel (AP) pinned structure. The AP-pinned structure has two ferromagnetic layers separated by a nonmagnetic antiparallel coupling (APC) layer and with their magnetization directions oriented antiparallel. One of the ferromagnetic layers in the AP-pinned structure is the reference layer in contact with the CPP-SV sensor's nonmagnetic electrically conducting spacer layer. In the improved AP-pinned structure each of the ferromagnetic layers has a thickness greater than 30 Å, preferably greater than approximately 50 Å, and the APC layer is either Ru or Ir with a thickness less than 7 Å, preferably about 5 Å or less. The ultrathin APC layer, especially if formed of iridium (Ir), provides significant coupling strength to allow the thick ferromagnetic layers to retain their magnetization directions in a stable antiparallel orientation.
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