发明名称 |
Magneto-resistive RAM having multi-bit cell array structure |
摘要 |
A magnetic random access memory (RAM) with a multi-bit cell array structure includes an access transistor formed on a substrate, first through third resistance-variable elements, and first through third current supplying lines. The first through third resistance-variable elements are disposed between a bit line and the access transistor, and electrically connected to each other. The first through third current supplying lines are stacked alternately with the first through third resistance-variable elements. The first through third resistance-variable elements have equal resistances.
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申请公布号 |
US2006092690(A1) |
申请公布日期 |
2006.05.04 |
申请号 |
US20050260602 |
申请日期 |
2005.10.27 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM HYE-JIN;CHO WOO-YEONG;OH HYUNG-ROK |
分类号 |
G11C11/00 |
主分类号 |
G11C11/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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