发明名称 |
Bitline bias circuit and nor flash memory device including the bitline bias circuit |
摘要 |
The NOR flash memory device according to the present invention is operated by a high voltage supplied from bitline selection transistors and includes a bitline bias circuit for supplying a bias voltage of a constant level to the bitline bias transistor. In accordance with the present invention, it is possible to stably supply a desired voltage closing to a power voltage to the bitline bias transistor.
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申请公布号 |
US2006092707(A1) |
申请公布日期 |
2006.05.04 |
申请号 |
US20050265218 |
申请日期 |
2005.11.02 |
申请人 |
JEON HONG-SOO;LEE SEUNG-KEUN |
发明人 |
JEON HONG-SOO;LEE SEUNG-KEUN |
分类号 |
G11C16/04 |
主分类号 |
G11C16/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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