FIBER SOI SUBSTRATE, SEMICONDUCTOR DEVICE USING SAME AND METHOD FOR MANUFACTURING SAME

摘要

Disclosed is an SOI substrate which enables to form a composite device of an MOS integrated circuit and a passive device, while contributing to reduce the size and production cost of a semiconductor device. Specifically disclosed is an SOI substrate (5) having a fiber (1) having a polygonal cross section and a semiconductor thin film (3) which is formed on at least one surface of the fiber (1) and then crystallized thereon. The surface of the fiber (1) is provided with a plurality of grooves (8) extending in the longitudinal direction of the fiber (1) with intervals in transverse direction.