SOLID-STATE IMAGE PICKUP DEVICE

摘要

In a solid-state image pickup element, a plurality of pixels provided with a photoelectric converting part and an emitting part are formed on a silicon substrate. The photoelectric converting part accumulates charges of a quantity that corresponds to incident light. The emitting part outputs the charges accumulated by the photoelectric converting part as pixel signals. In a semiconductor element region formed on a silicon substrate surface, a gettering region is formed for each pixel. An acceptor type impurity is diffused in the gettering region so that the product of an area rate of the gettering region occupied within one pixel and the number of the acceptor type impurity atoms per unit area in the gettering region is 3×10<SUP>6</SUP>[µm<SUP>-2</SUP>] or more. The product of 3×10<SUP>6</SUP>[µm<SUP>-2</SUP>] is obtained based on experimental data and is a value that can surely reduce dark current.