| 摘要 |
To provide surface-emitting type semiconductor lasers that can emit laser light with a high power output and a narrow radiation angle, and methods for manufacturing the same. A surface-emitting type semiconductor laser 200 in accordance with the present invention includes a substrate 101 , a first mirror 102 formed above the substrate 101 , an active layer 103 formed above the first mirror 102 , a second mirror 104 formed above the active layer 103 , and a lens section 190 formed above the second mirror 104 , wherein the lens section 190 has a function to change a path of light that is emitted from an upper surface 104 a of the second mirror 104 , at least one of the first mirror 102 and the active layer 103 has a photonic crystal region 122 having a refractive index distribution that is periodic in a plane direction, and the photonic crystal region 122 has a defect region 124 and has a function to confine light in the defect region 124.
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