发明名称 |
Large-capacity magnetic memory using carbon nano-tube |
摘要 |
Disclosed is a high-capacity magnetic memory capable of writing and reading a magnetic record in/from a magnetic recording film according to a perpendicular magnetic recording system at a high speed in a purely-electrically random access manner. In the magnetic memory, a writing-magnetic-field generating means 62 and a writing word line 43 are disposed relative to a perpendicular magnetic recording film 50 , and a reading/writing bit-line conductor 41 , a magnetoresistive-effect element 20 and a reading word lead conductor 42 are laminated in order on a probe substrate opposed to the perpendicular magnetic recording film 50 . A magnetic probe 30 composed of a carbon nanotube containing a soft magnetic material is disposed relative to the magnetoresistive-effect element 20 in a standing manner, and electrically connected to the reading/writing bit-line conductor. During a writing operation, a micro-discharge is generated in a micro-gap G between the edge of the magnetic probe and the magnetic recording film under a writing magnetic field to allow a writing current to flow through the micro-gap G so as to heat a micro-region of the magnetic recording film in such a manner that it goes through its Curie point to thereby become magnetized in the direction of the recording magnetic field to form a magnetic record therein. During a reading operation, the magnetic record is read out through the magnetic probe in accordance with a current variation in the magnetoresistive-effect element.
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申请公布号 |
US2006092542(A1) |
申请公布日期 |
2006.05.04 |
申请号 |
US20050516009 |
申请日期 |
2005.11.01 |
申请人 |
UMK TECHNOLOGIES CO., LTD. |
发明人 |
USHIDA TAKASHI;MORI NOBUYUKI;KAMIJO YOSHIMI;OKAZAKI AKIHIRO;MITSUZUKA AKIRA;HATAKEYAMA RIKIZOU;IDO HIDEAKI;NAKAJIMA KO;TAKOSHIMA TAKEHIRO |
分类号 |
G11B5/02;G11C11/15;H01L21/8246;H01L27/105;H01L27/22;H01L43/08;H01L51/00;H01L51/30 |
主分类号 |
G11B5/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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