发明名称 Semiconductor device and method of fabricating the same
摘要 Slit-like gap regions are provided at sides of a bonding pad that surrounds a window for bonding. The bonding pad is divided into a region at the side of the window and another region at the side of an adjoining interconnection layer in which the gap regions are the boundaries between these regions. The region provided at the side of the wiring layer is spaced apart from the region at the side of the bonding window by the width of the associated gap region. The gap regions are filled with a passivation film that is soft as compared with Top-side. Thermal stress is absorbed and distributed by the gap regions, and diffusion of metal atoms from the region at the side of the window to the region at the side of the interconnection layer is reduced.
申请公布号 US2006091537(A1) 申请公布日期 2006.05.04
申请号 US20050257825 申请日期 2005.10.24
申请人 SPANSION LLC 发明人 SUZUKI SEIICHI
分类号 H01L23/48;H01L23/52 主分类号 H01L23/48
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