| 摘要 |
A multi-layer electrode and a compound semiconductor light emitting device comprising the same. A multi-layer electrode for the compound semiconductor light emitting device may be formed on a p-type compound semiconductor layer of the compound semiconductor light-emitting device and may include: a first electrode layer formed on the p-type compound semiconductor layer which comprises a substance selected from the group consisting of a transparent conductive oxide, a non-conductive oxide, and a nitride; and a second electrode layer formed on the first electrode layer which comprises a substance selected from the group consisting of a transparent conductive oxide, a non-conductive oxide, and a nitride.
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