发明名称 |
Semiconductor device including semiconductor regions having differently strained channel regions and a method of manufacturing the same |
摘要 |
By locally modifying the intrinsic stress of a dielectric layer laterally enclosing gate electrode structures of a transistor configuration formed in accordance with in-laid gate techniques, the charge carrier mobility of different transistor elements may individually be adjusted. In particular, in in-laid gate structure transistor architecture, NMOS transistors and PMOS transistors may receive a tensile and a compressive stress, respectively.
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申请公布号 |
US2006094193(A1) |
申请公布日期 |
2006.05.04 |
申请号 |
US20050145697 |
申请日期 |
2005.06.06 |
申请人 |
HORSTMANN MANFRED;PRUEFER EKKEHARD;BUCHHOLTZ WOLFGANG |
发明人 |
HORSTMANN MANFRED;PRUEFER EKKEHARD;BUCHHOLTZ WOLFGANG |
分类号 |
H01L21/8234;H01L21/336;H01L21/8238 |
主分类号 |
H01L21/8234 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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