Non-volatile memory device e.g. flash memory, programming method for e.g. personal computer, involves detecting whether bitline voltage falls below preset detection voltage during programming period associated with program loop

摘要

The method involves applying wordline and bitline voltages to a memory cell of the non-volatile memory device. Detection is made whether the bitline voltage falls below a preset detection voltage during a programming period associated with a program loop. Programming conditions for another programming period associated with another loop is determined following the former loop based on the result of the voltage detection. An independent claim is also included for a non-volatile memory device comprising a voltage generating circuit and control circuit.