发明名称 |
Semiconductor laser device and process for preparing the same |
摘要 |
Provided are a high output semiconductor laser device that is capable of inhibiting changes in far-field horizontal (FFH) due to increased output thereof, and a process for preparing the same. The semiconductor laser device in accordance with the present invention comprises a first clad layer of a first conductivity type formed on a substrate; an active layer formed on the first clad layer; and a second clad layer of a second conductivity type formed on the active layer and including an upper region having a ridge structure, wherein the second clad layer has at least one high refractivity layer inserted into the ridge structure, the high refractivity layer having a higher refractive index than the second clad layer.
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申请公布号 |
US2006093003(A1) |
申请公布日期 |
2006.05.04 |
申请号 |
US20050151552 |
申请日期 |
2005.06.14 |
申请人 |
SAMSUNG ELECTRO-MECHANICS CO., LTD. |
发明人 |
MOON KI W.;PARK JONG I.;KIM YU S.;OH HYE R. |
分类号 |
H01S5/00 |
主分类号 |
H01S5/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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