| 摘要 |
Semiconductor devices are fabricated in a strained layer region and strained layer-free region of the same substrate. A first semiconductor device, such as a memory cell, e.g. a deep trench storage cell, is formed in a strained layer-free region of the substrate. A strained layer region is selectively formed in the same substrate. A second semiconductor device (66, 68, 70), such as an FET, e. g. an MOSFET logic device, is formed in the strained layer region.
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