| 摘要 |
A thin-film transistor for an active matrix display is fabricated using printing means, such as a gravure offset printer. First and second pattern layers ( 25 <SUB>1</SUB> , 25 <SUB>2</SUB> ; 30 ) are formed on a layer structure ( 4 ) wherein at least one of the layers is printed. The printed layers ( 25 <SUB>1</SUB> , 25 <SUB>2</SUB> ; 30 ) mask regions ( 27 <SUB>1</SUB> , 27 <SUB>2</SUB> , 28 ) for defining source and drain terminals. The second pattern layer ( 28 ) can be removed so as to allow etching of the second region ( 28 ) for defining a channel.
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