发明名称 |
Method for treating base oxide to improve high-K material deposition |
摘要 |
A method for forming a high-K material layer in a semiconductor device fabrication process including providing a silicon semiconductor substrate or thermally growing interfacial oxide layer comprising silicon dioxide over the silicon substrate; treating with an aqueous base solution or nitridation and depositing a high-K material layer.
|
申请公布号 |
US2006094192(A1) |
申请公布日期 |
2006.05.04 |
申请号 |
US20050048487 |
申请日期 |
2005.01.31 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
YANG MING-HO;YAO LIANG-GEI;CHEN SHIH-CHANG |
分类号 |
H01L21/336;H01L21/3205;H01L21/76 |
主分类号 |
H01L21/336 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|