发明名称 High-power dielectric seasoning for stable wafer-to-wafer thickness uniformity of dielectric CVD films
摘要 A method for seasoning a deposition chamber wherein the chamber components and walls are densely coated with a material that does not contain carbon prior to deposition of an organo-silicon material on a substrate. An optional carbon-containing layer may be deposited therebetween. A chamber cleaning method using low energy plasma and low pressure to remove residue from internal chamber surfaces is provided and may be combined with the seasoning process.
申请公布号 US2006093756(A1) 申请公布日期 2006.05.04
申请号 US20040981430 申请日期 2004.11.03
申请人 RAJAGOPALAN NAGARAJAN;XIA LI-QUN;BALSEANU MIHAELA;NOWAK THOMAS;SHAH RANJANA;XU HUIWEN;PETERSON CHAD;WITTY DEREK R;M SAAD HICHEM 发明人 RAJAGOPALAN NAGARAJAN;XIA LI-QUN;BALSEANU MIHAELA;NOWAK THOMAS;SHAH RANJANA;XU HUIWEN;PETERSON CHAD;WITTY DEREK R.;M'SAAD HICHEM
分类号 B05D1/36 主分类号 B05D1/36
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