| 发明名称 |
METHOD OF FORMING A TRANSISTOR HAVING A DUAL LAYER DIELECTRIC |
| 摘要 |
<p>Embodiments of methods, apparatuses, components, and/or systems for forming a transistor (100) having a dual layer dielectric (108,110) are described.</p> |
| 申请公布号 |
WO2006047024(A1) |
申请公布日期 |
2006.05.04 |
| 申请号 |
WO2005US34019 |
申请日期 |
2005.09.21 |
| 申请人 |
HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.;HOFFMAN, RANDY;MARDILOVICH, PETER |
发明人 |
HOFFMAN, RANDY;MARDILOVICH, PETER |
| 分类号 |
H01L29/786;H01L21/336;H01L21/445;H01L29/49 |
主分类号 |
H01L29/786 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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