发明名称 |
MAGNETORESISTIVE ELEMENT AND MAGNETIC MEMORY DEVICE |
摘要 |
<p>There are provided a magnetoresistive element and a magnetic memory device. It is possible to reduce the current for a magnetic domain wall movement and drive it at a room temperature in a current-induced single magnetic domain wall movement phenomenon. The magnetoresistive element includes at least: a magnetic wire (1) for forming a magnetic domain wall potential (7) bonding the single magnetic domain wall (2); magnetic field application means for generating a magnetic field for introducing the single magnetic domain wall (2) into the magnetic wire (1); and drive current application means for applying current (3) containing a resonance oscillation frequency component decided by the magnetic domain wall potential (7).</p> |
申请公布号 |
WO2006046591(A1) |
申请公布日期 |
2006.05.04 |
申请号 |
WO2005JP19666 |
申请日期 |
2005.10.26 |
申请人 |
KEIO UNIVERSITY;SAITOH, EIJI;MIYAJIMA, HIDEKI |
发明人 |
SAITOH, EIJI;MIYAJIMA, HIDEKI |
分类号 |
H01L29/82;G11B5/39;G11C11/15;H01L21/8246;H01L27/105;H01L43/08 |
主分类号 |
H01L29/82 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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