Lateral trench transistor has body region inside which a semiconductor region is provided which is electrically connected with source contact and its type of endowment corresponds to the type of endowment of body region

摘要

Lateral trench transistor (200) has a body region (4) inside which a semiconductor region (10) is provided adjoining to it. The semiconductor region is electrically connected with the source contact (12) and its type of endowment corresponds to the type of endowment of body region. An independent claim is also included for a method for manufacturing of endowed semiconductor region.