MEMORY CELL

摘要

The invention relates to microelectronic engineering and can be used for producing storing devices. The inventive memory cell is provided with a memory element comprising a first electrode, a second electrode and a dielectric layer disposed between said electrodes, wherein said dielectric layer is made from integrated in a stack N individual uniform films having substantially equal thickness d<80 mkm and N>1. The inventive embodiment of the dielectric layer disposed between the electrodes makes it possible to increase the chargeability thereof and to keep electric charges between electrodes over a long-term period.