摘要 |
An integrated circuit amplifier includes, in an exemplary embodiment, a first field effect transistor (FET) device configured as a source follower and a second FET device configured as a tunneling gate FET, the tunneling gate FET coupled to the source follower. The tunneling gate FET is further configured so as to set a transconductance of the amplifier and the source follower is configured so as to set an output conductance of the amplifier.
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