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经营范围
发明名称
Memory redundancy circuit for high density memory
摘要
申请公布号
EP0913868(B1)
申请公布日期
2006.05.03
申请号
EP19970308766
申请日期
1997.10.31
申请人
MACRONIX INTERNATIONAL CO., LTD.
发明人
YANG, NIEN CHAO;CHEN, CHUNG JU;LIN, CHUN JUNG
分类号
H01L27/112;H01L27/115
主分类号
H01L27/112
代理机构
代理人
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地址
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