| 摘要 |
An ITO sputtering target characterized in that in the ITO sputtering target the number of particles of 100 nm or larger diameter exposed upon royal water etching or sputter etching is 1 particle/mum2 or less; and an ITO sputtering target characterized by having a density of 7.12 g/cm3 or more. With respect to sputtering performance, the occurrence of arcing can be inhibited to thereby suppress the occurrence of ITO film attributed to the arcing. Thus, the quality deterioration of ITO film can be effectively inhibited.
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