发明名称 SPUTTERING TARGET AND METHOD FOR PRODUCTION THEREOF
摘要 A sintered sputtering target which has a structure having an average crystallite size of 1 nm to 50 nm and preferably comprises an alloy having three or more elements and containing, as a main component, at least one element selected from among Zr, Pd, Cu, Co, Fe, Ti, Mg, Sr, Y, Nb, Mo, Tc, Ru, Rh, Ag, Cd, In, Sn, Sb, Te and a rare earth metal; and a method for producing said target, which comprises sintering an atomized powder. The target and the method provide a target having an extremely fine and uniform structure having a high density and being produced by the sintering method, in place of a conventional bulk metal glass produced by the rapid cooling of a molten metal, which has a coarse crystal structure and requires a high cost for its production.
申请公布号 KR20060037420(A) 申请公布日期 2006.05.03
申请号 KR20067002328 申请日期 2006.02.02
申请人 NIKKO MATERIALS COMPANY, LIMITED 发明人 INOUE AKIHISA;KIMURA HISAMICHI;SASAMORI KENICHIRO;YAHAGI MASATAKA;NAKAMURA ATSUSHI;TAKAHASHI HIDEYUKI
分类号 C23C14/34;C22C5/00;C22C9/00;C22C16/00;C22C19/07;C22C21/10;C22C45/02;C22C45/10;C22F1/053 主分类号 C23C14/34
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