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发明名称
SEMICONDUCTOR LASER DIODE WITH MULTI QUANTUM BARRIER CLAD LAYERS
摘要
申请公布号
KR20060037030(A)
申请公布日期
2006.05.03
申请号
KR20040086135
申请日期
2004.10.27
申请人
SAMSUNG ELECTRONICS CO., LTD.
发明人
LIM, DAE HO
分类号
H01L33/06
主分类号
H01L33/06
代理机构
代理人
主权项
地址
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