| 摘要 |
A plasma processing device, comprising a chamber capable of maintaining an atmosphere depressurized less than the atmospheric pressure, a transmission pipe connected to the chamber, a gas lead-in mechanism leading gas into the transmission pipe, and a microwave supply source leading microwave from the outside to the inside of the transmission pipe. The plasma of the gas is formed in the transmission pipe, and a body to be processed installed in the chamber is processed by the plasma. The plasma processing device is characterized in that the transmission pipe is openably connected to the inner wall of the chamber positioned generally vertical to the principal plane of the body to be processed, and the body to be processed is not installed on the line of direct sight from the plasma.
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