Resistive memory device having array of probes and method of manufacturing the resistive memory device

摘要

Provided are a resistive memory device having a probe array and a method of manufacturing the resistive memory device. The resistive memory device includes a memory part (10) having a bottom electrode (100) and a ferroelectric layer (200) sequentially formed on a first substrate; a probe part (20) having an array of resistive probes (400) arranged on a second substrate (300), with the tips of the resistive probes facing the ferroelectric layer (200) such that they can write and read data on the ferroelectric layer; and a binding layer (500) which grabs and fixes the resistive probes on or above the ferroelectric layer. The method of manufacturing the resistive memory device includes forming a bottom electrode and a ferroelectric layer sequentially on a first substrate; forming an array of resistive probes for writing and reading data on a second substrate; and wafer level bonding the first substrate to the second substrate using a binding layer such that tips of the resistive probes face the surface of the ferroelectric layer.