FORMING METHOD FOR PVD COBALT SALICIDE LAYER AND MANUFACTURING METHOD FOR A SEMICONDUCTOR DEVICE USING THE FORMING METHOD,申请号KR20040087050-传众专利搜索

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发明名称	FORMING METHOD FOR PVD COBALT SALICIDE LAYER AND MANUFACTURING METHOD FOR A SEMICONDUCTOR DEVICE USING THE FORMING METHOD
摘要
申请公布号	KR20060037944(A)	申请公布日期	2006.05.03
申请号	KR20040087050	申请日期	2004.10.29
申请人	SAMSUNG ELECTRONICS CO., LTD.	发明人	YUN, JONG HO;CHOI, GIL HEYUN;JUNG, SUG WOO;KIM, HYUN SU;JUNG, EUN JI
分类号	H01L21/24;H01L21/335	主分类号	H01L21/24
代理机构		代理人
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地址

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