SEMICONDUCTOR LASER DIODE WITH REFRACTION CONTROLLABLE CLAD LAYER,申请号KR20040086122-传众专利搜索

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发明名称	SEMICONDUCTOR LASER DIODE WITH REFRACTION CONTROLLABLE CLAD LAYER
摘要
申请公布号	KR20060037021(A)	申请公布日期	2006.05.03
申请号	KR20040086122	申请日期	2004.10.27
申请人	SAMSUNG ELECTRONICS CO., LTD.	发明人	KIM, JONG WAN
分类号	H01L33/14	主分类号	H01L33/14
代理机构		代理人
主权项
地址

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