Method of manufacturing gate insulated field effect transistors

摘要

A method of manufacturing thin film field effect transistors is described. The channel region of the transistor is formed by depositing an amorphous semiconductor film followed by thermal treatment for converting the amorphous phase to a polycrystalline phase. The deposition of the amorphous semiconductor film is carried out by sputtering in an atmosphere comprising hydrogen in order to introduce hydrogen into the amorphous semiconductor film, and a gate insulating oxide film is deposited by sputtering in an atmosphere comprising oxygen. The method enables field effect transistors to be formed on large area substrates and is particularly useful in the manufacture of liquid crystal display panels.