SEMICONDUCTOR DEVICE HAVING MULTI BIT NONVOLATILE MEMORY CELL AND FABRICATION METHOD THEREOF

摘要

The device has a multi-bit nonvolatile memory unit cell with a set of transistors (T1-Tn) for sharing source and drain regions. Each transistor includes a control gate and a charge storage region that accumulates charges within the transistors. The control gates are connected to a control voltage to shift a threshold voltage in the transistors to store multi-bit per unit cell. An independent claim is also included for a method of fabricating a nonvolatile semiconductor device.