发明名称 |
Method for forming an ultra-shallow junction in a semiconductor substrate using a nuclear stopping layer |
摘要 |
A method for forming an ultra-shallow junction in a semiconductor substrate is provided. A semiconductor substrate having a top surface is prepared. A dielectric layer is then formed on the top surface. A first ion implantation process is carried out to implant a plurality of heavy ions into the dielectric layer at a first ion range Rp. Thereafter, a second ion implantation process is carried out to implant a plurality of less-heavy ions into the dielectric layer at a second ion range Rp. The second ion range Rp is smaller than said first ion range Rp. A portion of the plural less-heavy ions are decelerated by the previously implanted heavy ions and are implanted into the semiconductor substrate, thereby forming a ultra-shallow junction containing the less-heavy ions. Subsequently, the dielectric layer is completely removed.
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申请公布号 |
US7037815(B2) |
申请公布日期 |
2006.05.02 |
申请号 |
US20040710241 |
申请日期 |
2004.06.29 |
申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
LAI YUAN-CHANG |
分类号 |
H01L21/22;H01L21/04;H01L21/20;H01L21/265;H01L21/3115;H01L21/336;H01L21/36;H01L21/38;H01L21/425 |
主分类号 |
H01L21/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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