发明名称 |
Quantum efficiency enhancement for CMOS imaging sensor with borderless contact |
摘要 |
The present invention is a CMOS image sensor and its method of fabrication. This invention provides an efficient structure to improve the quantum efficiency of a CMOS image sensor with borderless contact. The image sensor comprises a N-well/P-substrate type photodiode with borderless contact and dielectric structure covering the photodiode region. The dielectric structure is located between the photodiode and the interlevel dielectric (ILD) and is used as a buffer layer for the borderless contact. The method of fabricating a high performance photodiode comprises forming a photodiode in the n-well region of a shallow trench, and embedding a dielectric material between the ILD oxide and the photodiode having a refraction index higher than the ILD oxide.
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申请公布号 |
US7038232(B2) |
申请公布日期 |
2006.05.02 |
申请号 |
US20030669516 |
申请日期 |
2003.09.24 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
YAUNG DUN-NIAN;WUU SHOU-GWO;CHEN HO-CHING;TSENG CHIEN-HSIEN;LIN JENG-SHYAN |
分类号 |
H01L29/06;H01L21/00;H01L21/82;H01L27/14;H01L27/146;H01L29/82;H01L31/00;H04N5/335 |
主分类号 |
H01L29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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