发明名称 |
Application of single exposure alternating aperture phase shift mask to form sub 0.18 micron polysilicon gates |
摘要 |
In accordance with the objects of this invention, a new method of fabricating a polysilicon gate transistor is achieved. An alternating aperture phase shift mask (AAPSM) is used to pattern polysilicon gates in a single exposure without a trim mask. A semiconductor substrate is provided. A gate dielectric layer is deposited. A polysilicon layer is deposited. The polysilicon layer, the gate dielectric layer and the semiconductor substrate are patterned to form trenches for planned shallow trench isolations (STI). A trench oxide layer is deposited filling the trenches. The trench oxide layer is polished down to the top surface of the polysilicon layer to complete the STI. A photoresist layer is deposited and patterned to form a feature mask for planned polysilicon gates. The patterning is by a single exposure using an AAPSM mask. Unwanted features in the photoresist pattern that are caused by phase conflicts overlie the STI. The polysilicon layer is etched to form the polysilicon gates.
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申请公布号 |
US7037791(B2) |
申请公布日期 |
2006.05.02 |
申请号 |
US20020135071 |
申请日期 |
2002.04.30 |
申请人 |
CHARTERED SEMICONDUCTOR MANUFACTURING LTD. |
发明人 |
CHOO LAY CHENG;LEE JAMES YONG MENG;CHAN LAP |
分类号 |
H01L21/336;G03C5/00;G03C5/16;H01L21/28;H01L21/60;H01L21/768;H01L21/8234 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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